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Micromachines | Free Full-Text | A SiC Planar MOSFET with an Embedded  MOS-Channel Diode to Improve Reverse Conduction and Switching
Micromachines | Free Full-Text | A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching

STM STPSC10H065D SiC-Diode 10A 650V Silicon Carbide Schottky TO-220AC  856070 | eBay
STM STPSC10H065D SiC-Diode 10A 650V Silicon Carbide Schottky TO-220AC 856070 | eBay

Wolfspeed THT SiC-Schottky Diode , 600V / 4A, 2-Pin TO-220
Wolfspeed THT SiC-Schottky Diode , 600V / 4A, 2-Pin TO-220

Cree C3D06065A SiC-Diode 9A 650V Silicon Carbide Schottky Diode TO220AC  855426 | eBay
Cree C3D06065A SiC-Diode 9A 650V Silicon Carbide Schottky Diode TO220AC 855426 | eBay

Simulating SiC Diodes - EEWeb
Simulating SiC Diodes - EEWeb

PDF] Cree Application Note: SiC Power Schottky Diodes in Power Factor  Correction Circuits | Semantic Scholar
PDF] Cree Application Note: SiC Power Schottky Diodes in Power Factor Correction Circuits | Semantic Scholar

Advantages of the 1200 V SiC Schottky Diode with MPS Design
Advantages of the 1200 V SiC Schottky Diode with MPS Design

Wolfspeed / Cree 650V Silicon Carbide (SiC) Schottky Diode — New Product  Brief | Mouser Electronics - YouTube
Wolfspeed / Cree 650V Silicon Carbide (SiC) Schottky Diode — New Product Brief | Mouser Electronics - YouTube

Z-Rec®-SiC-Schottky-Dioden der G5 - Wolfspeed | DigiKey
Z-Rec®-SiC-Schottky-Dioden der G5 - Wolfspeed | DigiKey

C3D06060G Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; SMD;  600V; 6A; TO263-2 | TME - Elektronik Bauteile
C3D06060G Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; SMD; 600V; 6A; TO263-2 | TME - Elektronik Bauteile

6th Generation 650 V SiC Schottky Diode | Wolfspeed
6th Generation 650 V SiC Schottky Diode | Wolfspeed

C4D05120A Wolfspeed | Mouser Deutschland
C4D05120A Wolfspeed | Mouser Deutschland

PDF] Cree Application Note: SiC Power Schottky Diodes in Power Factor  Correction Circuits | Semantic Scholar
PDF] Cree Application Note: SiC Power Schottky Diodes in Power Factor Correction Circuits | Semantic Scholar

C3D02060A Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; THT;  600V; 2A; 39,5W; C3D | TME - Elektronik Bauteile
C3D02060A Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; THT; 600V; 2A; 39,5W; C3D | TME - Elektronik Bauteile

C3D10060A Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; THT;  600V; 10A; 136W; C3D | TME - Elektronik Bauteile
C3D10060A Wolfspeed(CREE) - Diode: Gleichrichterdiode Schottky | SiC; THT; 600V; 10A; 136W; C3D | TME - Elektronik Bauteile

Si vs SiC devices — Switchcraft
Si vs SiC devices — Switchcraft

C3D20065D: SiC-Dual-Schottkydiode, 650V, 26A (2x13), TO247 bei reichelt  elektronik
C3D20065D: SiC-Dual-Schottkydiode, 650V, 26A (2x13), TO247 bei reichelt elektronik

C3D20060D | Wolfspeed THT SiC-Schottky Diode Gemeinsame Kathode, 600V /  20A, 3-Pin TO-247 | RS
C3D20060D | Wolfspeed THT SiC-Schottky Diode Gemeinsame Kathode, 600V / 20A, 3-Pin TO-247 | RS

WOLFSPEED Cree C3D02060A Sic Schottky Diode, 2A, 600V To-220 (1 Piece) :  Amazon.in: Industrial & Scientific
WOLFSPEED Cree C3D02060A Sic Schottky Diode, 2A, 600V To-220 (1 Piece) : Amazon.in: Industrial & Scientific

C3D06060G: SMD-SiC-Schottkydiode 600V, 9A, D²Pak bei reichelt elektronik
C3D06060G: SMD-SiC-Schottkydiode 600V, 9A, D²Pak bei reichelt elektronik

Internal layout of the 1.2 kV-300 A CREE halfbridge power module. JBS:... |  Download Scientific Diagram
Internal layout of the 1.2 kV-300 A CREE halfbridge power module. JBS:... | Download Scientific Diagram

Silicon Carbide (SiC) Schottky Diodes - Wolfspeed | Mouser
Silicon Carbide (SiC) Schottky Diodes - Wolfspeed | Mouser

Cree releases four 650V SiC Schottky diodes
Cree releases four 650V SiC Schottky diodes

Si vs. SiC: Wie leistungsfähig sind SiC-MOSFETs? - Automotive -  Elektroniknet
Si vs. SiC: Wie leistungsfähig sind SiC-MOSFETs? - Automotive - Elektroniknet

Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh  thermal cycling stress - ScienceDirect
Failure mechanism of 4H-SiC junction barrier Schottky diodes under harsh thermal cycling stress - ScienceDirect