![Tube Time on X: "here's the annotated cross section of the 1N914 diode. the two Dumet slugs are separate pieces of metal from the leads, and are brazed together during manufacture. https://t.co/F9A8gcv1aS" / Tube Time on X: "here's the annotated cross section of the 1N914 diode. the two Dumet slugs are separate pieces of metal from the leads, and are brazed together during manufacture. https://t.co/F9A8gcv1aS" /](https://pbs.twimg.com/media/D3RkFiMUEAALNsp.jpg)
Tube Time on X: "here's the annotated cross section of the 1N914 diode. the two Dumet slugs are separate pieces of metal from the leads, and are brazed together during manufacture. https://t.co/F9A8gcv1aS" /
![Graphene-Silicon Diode for 2D Heterostructure Electrical Failure Protection | Research Communities by Springer Nature Graphene-Silicon Diode for 2D Heterostructure Electrical Failure Protection | Research Communities by Springer Nature](https://images.zapnito.com/uploads/wHIYSDPUSeSomXK6WMUN_%E5%9B%BE%E7%89%875.jpg)
Graphene-Silicon Diode for 2D Heterostructure Electrical Failure Protection | Research Communities by Springer Nature
![Schematic cross-sections of the vertical diodes with breakdown voltages... | Download Scientific Diagram Schematic cross-sections of the vertical diodes with breakdown voltages... | Download Scientific Diagram](https://www.researchgate.net/publication/224183411/figure/fig1/AS:302647329476608@1449168154132/Schematic-cross-sections-of-the-vertical-diodes-with-breakdown-voltages-a-up-to-27-V.png)
Schematic cross-sections of the vertical diodes with breakdown voltages... | Download Scientific Diagram
![Figure 2.5 from Designing Shallow Trench Isolation Diodes as Electrostatic Discharge Protection for Applications in Deep Submicron CMOS Technology | Semantic Scholar Figure 2.5 from Designing Shallow Trench Isolation Diodes as Electrostatic Discharge Protection for Applications in Deep Submicron CMOS Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/1c58d0a284b27a073d6547d3633f7ad688da8a47/32-Figure2.5-1.png)
Figure 2.5 from Designing Shallow Trench Isolation Diodes as Electrostatic Discharge Protection for Applications in Deep Submicron CMOS Technology | Semantic Scholar
![Figure 1 from A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization | Semantic Scholar Figure 1 from A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/13c4e1f8e922091b5d30487463ac3c40e04efc11/1-Figure1-1.png)