ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology
Analytics for US Patent No. 8531805, Gated diode having at least one lightly-doped drain (LDD) implant blocked and circuits and methods employing same
![Schematical illustration of a gated-diode structure ͑ not to scale ͒ . | Download Scientific Diagram Schematical illustration of a gated-diode structure ͑ not to scale ͒ . | Download Scientific Diagram](https://www.researchgate.net/publication/234937485/figure/fig1/AS:299821257773064@1448494366810/Schematical-illustration-of-a-gated-diode-structure-not-to-scale.png)
Schematical illustration of a gated-diode structure ͑ not to scale ͒ . | Download Scientific Diagram
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology
![Figure 3 from Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization | Semantic Scholar Figure 3 from Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/4a589b7d3e9e180cb41100269d3072b4a47ab1b4/2-Figure3-1.png)
Figure 3 from Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization | Semantic Scholar
![Micromachines | Free Full-Text | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer Micromachines | Free Full-Text | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer](https://www.mdpi.com/micromachines/micromachines-10-00091/article_deploy/html/images/micromachines-10-00091-g001.png)
Micromachines | Free Full-Text | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
![Color online) (a) Schematic diagram of a gated diode. (b) Surface band... | Download Scientific Diagram Color online) (a) Schematic diagram of a gated diode. (b) Surface band... | Download Scientific Diagram](https://www.researchgate.net/publication/253974099/figure/fig2/AS:287882305654791@1445647898248/Color-online-a-Schematic-diagram-of-a-gated-diode-b-Surface-band-diagram-of-gated.png)
Color online) (a) Schematic diagram of a gated diode. (b) Surface band... | Download Scientific Diagram
![Figure 2 from Gated and STI defined ESD diodes in advanced bulk FinFET technologies | Semantic Scholar Figure 2 from Gated and STI defined ESD diodes in advanced bulk FinFET technologies | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/664eda9d8be25f7149929422ea75ed57a83c5c08/1-Figure2-1.png)
Figure 2 from Gated and STI defined ESD diodes in advanced bulk FinFET technologies | Semantic Scholar
![Cross section of the gated diode. The device was fabricated in CMOS... | Download Scientific Diagram Cross section of the gated diode. The device was fabricated in CMOS... | Download Scientific Diagram](https://www.researchgate.net/publication/254010286/figure/fig1/AS:429867566145538@1479499822532/Cross-section-of-the-gated-diode-The-device-was-fabricated-in-CMOS-technology.png)
Cross section of the gated diode. The device was fabricated in CMOS... | Download Scientific Diagram
Microelectronic Test Structures for the Development of a Strip Sensor Technology for High Energy Physics
![A Three-Dimensional Gated Diode Structure for Surface Parameter Characterization in a 3D Sensor Technology | Semantic Scholar A Three-Dimensional Gated Diode Structure for Surface Parameter Characterization in a 3D Sensor Technology | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/0790d40bd9a366ec021dde44252693a909642808/2-Figure1-1.png)
A Three-Dimensional Gated Diode Structure for Surface Parameter Characterization in a 3D Sensor Technology | Semantic Scholar
![Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL | SpringerLink Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL | SpringerLink](https://media.springernature.com/lw685/springer-static/image/chp%3A10.1007%2F978-3-030-19531-1_10/MediaObjects/478949_1_En_10_Fig4_HTML.png)
Analysis and TCAD Simulation for C/V, and G/V Electrical Characteristics of Gated Controlled Diodes for the AGIPD of the EuXFEL | SpringerLink
![Figure 1 from Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization | Semantic Scholar Figure 1 from Gated diode in breakdown voltage collapse regime — A test vehicle for oxide characterization | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/4a589b7d3e9e180cb41100269d3072b4a47ab1b4/1-Figure1-1.png)