![TPS65994AD: Schottky diode for surge current protection - Interface forum - Interface - TI E2E support forums TPS65994AD: Schottky diode for surge current protection - Interface forum - Interface - TI E2E support forums](https://e2e.ti.com/resized-image/__size/320x240/__key/communityserver-discussions-components-files/138/pastedimage1617786341842v1.png)
TPS65994AD: Schottky diode for surge current protection - Interface forum - Interface - TI E2E support forums
![1-3 Differences between protection diodes (ESD protection diodes and surge protection Zener diodes) and diodes for constant-voltage regulation | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA) 1-3 Differences between protection diodes (ESD protection diodes and surge protection Zener diodes) and diodes for constant-voltage regulation | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)](https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/knowledge/e-learning/basics-of-tvs-diodes/chap1-4-2_en.png)
1-3 Differences between protection diodes (ESD protection diodes and surge protection Zener diodes) and diodes for constant-voltage regulation | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
![IVcharacteristics of an MPS diode with 3.5 A nominal current in surge... | Download Scientific Diagram IVcharacteristics of an MPS diode with 3.5 A nominal current in surge... | Download Scientific Diagram](https://www.researchgate.net/publication/283118924/figure/fig1/AS:364132504227840@1463827362107/V-characteristics-of-an-MPS-diode-with-35-A-nominal-current-in-surge-current-mode-at.png)
IVcharacteristics of an MPS diode with 3.5 A nominal current in surge... | Download Scientific Diagram
![current - What makes some diode surge rated higher than others? - Electrical Engineering Stack Exchange current - What makes some diode surge rated higher than others? - Electrical Engineering Stack Exchange](https://i.stack.imgur.com/Hgu28.png)
current - What makes some diode surge rated higher than others? - Electrical Engineering Stack Exchange
![New Structure in 3rd-Generation Devices for Enhanced Surge Current Robustness, Further Improved VF Characteristics | 3rd Generation SiC Schottky Barrier Diode:SCS3 Series : Enhanced the Surge Current Rating while Maintaining Low Losses, New Structure in 3rd-Generation Devices for Enhanced Surge Current Robustness, Further Improved VF Characteristics | 3rd Generation SiC Schottky Barrier Diode:SCS3 Series : Enhanced the Surge Current Rating while Maintaining Low Losses,](https://techweb.rohm.com/upload/2018/01/keypoint_170328_02.jpg)
New Structure in 3rd-Generation Devices for Enhanced Surge Current Robustness, Further Improved VF Characteristics | 3rd Generation SiC Schottky Barrier Diode:SCS3 Series : Enhanced the Surge Current Rating while Maintaining Low Losses,
![1 Surge Current in the Capacitor filter Initially the filter capacitor is uncharged. At the instant the switch is closed, voltage is connected to the bridge. - ppt download 1 Surge Current in the Capacitor filter Initially the filter capacitor is uncharged. At the instant the switch is closed, voltage is connected to the bridge. - ppt download](https://slideplayer.com/9724333/31/images/slide_1.jpg)
1 Surge Current in the Capacitor filter Initially the filter capacitor is uncharged. At the instant the switch is closed, voltage is connected to the bridge. - ppt download
![Materials | Free Full-Text | A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations Materials | Free Full-Text | A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations](https://pub.mdpi-res.com/materials/materials-13-02669/article_deploy/html/images/materials-13-02669-g003.png?1592823958)
Materials | Free Full-Text | A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations
![Surge-current pulse, V GE = 45V, I C,peak = 754A, pulse-width = 10 ms,... | Download Scientific Diagram Surge-current pulse, V GE = 45V, I C,peak = 754A, pulse-width = 10 ms,... | Download Scientific Diagram](https://www.researchgate.net/publication/269294047/figure/fig4/AS:667692658864133@1536201743541/Surge-current-pulse-V-GE-45V-I-C-peak-754A-pulse-width-10-ms-T-125-C-Wsurge.png)
Surge-current pulse, V GE = 45V, I C,peak = 754A, pulse-width = 10 ms,... | Download Scientific Diagram
![Investigation on diode surge forward current ruggedness of Si and SiC power modules | Semantic Scholar Investigation on diode surge forward current ruggedness of Si and SiC power modules | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/c58c0140aaf80c7fc9c09725bb1fdc62484f0098/9-Figure10-1.png)
Investigation on diode surge forward current ruggedness of Si and SiC power modules | Semantic Scholar
![Juxing Ug6kb60 600V6a Vf1.1V D3K Molded Plastic Packaged High Surge Current Capability Bridge Rectifier Diode - China Rectifier, Diode | Made-in-China.com Juxing Ug6kb60 600V6a Vf1.1V D3K Molded Plastic Packaged High Surge Current Capability Bridge Rectifier Diode - China Rectifier, Diode | Made-in-China.com](https://image.made-in-china.com/2f0j00oZtbsjVqwBcF/Juxing-Ug6kb60-600V6a-Vf1-1V-D3K-Molded-Plastic-Packaged-High-Surge-Current-Capability-Bridge-Rectifier-Diode.webp)
Juxing Ug6kb60 600V6a Vf1.1V D3K Molded Plastic Packaged High Surge Current Capability Bridge Rectifier Diode - China Rectifier, Diode | Made-in-China.com
![Figure 12 from 1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability | Semantic Scholar Figure 12 from 1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/500214da24b88885bee47f83f87c8d2cbd2b3e5b/5-Figure12-1.png)
Figure 12 from 1.2-kV 4H-SiC Merged PiN Schottky Diode With Improved Surge Current Capability | Semantic Scholar
![Figure 3 from Repetitive surge current test of SiC MPS diode with load in bipolar regime | Semantic Scholar Figure 3 from Repetitive surge current test of SiC MPS diode with load in bipolar regime | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/c123d87be72827072d131c8f6da26e5630c7ede0/2-Figure3-1.png)
Figure 3 from Repetitive surge current test of SiC MPS diode with load in bipolar regime | Semantic Scholar
![The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents | Scientific Reports The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fs41598-023-46538-6/MediaObjects/41598_2023_46538_Fig7_HTML.png)
The effect of wafer thinning and thermal capacitance on chip temperature of SiC Schottky diodes during surge currents | Scientific Reports
![Figure 5 from Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes | Semantic Scholar Figure 5 from Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/584e77ec542fce33266d3e137c70f75c83a1e401/2-Figure5-1.png)