Analytics for US Patent No. 6977208, Schottky with thick trench bottom and termination oxide and process for manufacture
V10P10-M3/86A Vishay | Vishay 100V 10A, Schottky Diode, 3-Pin TO-277A V10P10-M3/86A | 710-3926 | RS Components
TMBS®, Trench MOS Barrier Schottky Rectifiers Address Weaknesses of Traditional Planar Schottky Devices
![Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch - ScienceDirect Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0167931719302485-ga1.jpg)
Silicon carbide split-trench-source VDMOSFET with integrated Schottky barrier diode and reduced cell pitch - ScienceDirect
a) Structure of the simulated Schottky diode based on literature. (b)... | Download Scientific Diagram
Optimized Designing to Improve Electrical Characteristics of 4HÂŒSiC Wide Trench Junction Barrier Schottky Diode
![Figure 1 from 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current | Semantic Scholar Figure 1 from 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/ca2ccca5c2a24faef11b2181cfb4efa6ce63e56b/3-Figure1-1.png)
Figure 1 from 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current | Semantic Scholar
![Trench MOS-type Schottky diode Patent Grant Sasaki , et al. November 3, 2 [National Institute of Information and Communications Technology] Trench MOS-type Schottky diode Patent Grant Sasaki , et al. November 3, 2 [National Institute of Information and Communications Technology]](https://uspto.report/patent/grant/10825935/US10825935-20201103-D00001.png)